FIB : Focus Ion Beam

Focused Ion Beam (FIB) technology allows the capability to locally sputter materials by milling a sample surface with a highly focused beam of gallium ions. The ion beam is emitted from a liquid Ga ion source. At high beam currents it can be used to locally deposit conductors, insulators, or perform gas assisted etching techniques. At low beam currents it can be used for ion imaging or cleanup of amorphous damage.
FIB applications allow sub-micron precision and give rise to a number of useful applications.

FIB systems are widely utilized for :

- On-chip circuit modification

- Defect characterization (TEM/SEM/Auger sample preparation)

- Voltage contrast analysis

- Micro-machining

- Advanced circuit diagnostics for failure analysis.

FIB picture of step-covering, with successive layers

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DELFMEMS. Intellectual property of O.Millet. 2003-04.